31 years experience in electronic parts - NX Electronics Limited (Nextron)

  • 11F, Trust Centre
    Kowloon, Hong Kong
  • Opening Time
    Mon - Fri: 09:00 to 18:00
Description Part No. Brand Remarks
DRAM
DDR5
DDR5-4800 2Gx8 (16Gb) H5CG48MEBDX014N SK hynix
DDR4
DDR4-3200 512Mx16 (8Gb) K4A8G165WC-BCWE Samsung
DDR4-3200 512Mx16 (8Gb) MT40A512M16TB-062E:R Micron
DDR4-3200 2Gx8 (16Gb) H5ANAG8NCJR-XNC SK hynix
DDR4-3200 2Gx8 (16Gb) K4AAG085WA-BCWE Samsung
DDR4-3200 2Gx8 (16Gb) MT40A2G8SA-062E:F Micron
DDR4-3200 256Mx16 (4Gb) MT40A256M16TB-062E:G Micron
DDR4-3200 1Gx8 (8Gb) H5AN8G8NDJR-XNC SK hynix
DDR4-3200 1Gx8 (8Gb) K4A8G085WC-BCWE Samsung
DDR4-3200 1Gx16 (16Gb) H5ANAG6NCJR-XNC SK hynix
DDR4-3200 1Gx16 (16Gb) K4AAG165WA-BCWE Samsung
DDR4-3200 1Gx16 (16Gb) MT40A1G16KH-062E AAT:E Micron
DDR4-2666 512Mx8 (4Gb) K4A4G085WF-BCTD Samsung
DDR4-2666 512Mx8 (4Gb) NT5AD512M8D3-HR Nanya
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BCTD Samsung
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BITD Samsung
DDR4-2666 256Mx16 (4Gb) H5AN4G6NBJR-VKC SK hynix
DDR4-2666 256Mx16 (4Gb) K4A4G165WF-BCTD Samsung
DDR4-2666 1Gx8 (8Gb) MT40A1G8SA-075:E Micron
DDR4-2400 512Mx8 (4Gb) K4A4G085WE-BCRC Samsung
DDR4-3200 2Gx16 (32Gb) MT40A2G16TBB-062E:F Micron
DDR3
DDR3-1600 512Mx16 (8Gb) Ind 1.35V MT41K512M16HA-125 IT:A Micron
DDR3-1600 512Mx16 (8Gb) 1.35V MT41K512M16HA-125:A Micron
DDR3-1600 128Mx16 (2Gb) MT41K128M16JT-125:K Micron
DDR3-2133 64Mx16 (1Gb) K4B1G1646I-BCNB Samsung
DDR3-2133 512Mx8 (4Gb) K4B4G0846E-BCNB Samsung
DDR3-2133 256Mx16 (4Gb) K4B4G1646E-BCNB Samsung
DDR3-1866 512Mx8 (4Gb) 1.35V MT41K512M8DA-107:P Micron
DDR3-1866 256Mx8 (2Gb) 1.35V K4B2G0846F-BYMA Samsung
DDR3-1866 256Mx8 (2Gb) 1.35V NT5CC256M8JQ-EK Nanya
DDR3-1866 256Mx16 (4Gb) 1.35V K4B4G1646E-BYMA Samsung
DDR3-1866 256Mx16 (4Gb) 1.35V MT41K256M16TW-107 AAT:P Micron
DDR3-1866 256Mx16 (4Gb) 1.35V MT41K256M16TW-107:P Micron
DDR3-1866 256Mx16 (4Gb) H5TQ4G63CFR-RDC SK hynix
DDR3-1866 1Gx8 (8Gb) 1.35V MT41K1G8RKB-107:P Micron
DDR3-1866 128Mx16 (2Gb) Ind 1.35V K4B2G1646F-BMMA Samsung
DDR3-1600 64Mx16 (1Gb) Ind 1.35V NT5CC64M16GP-DII Nanya
DDR3-1600 128Mx8 (1Gb) IS43TR16128DL-125KBL-TR ISSI
DDR2
DDR2-800 32Mx16 Pb-Free Halogen-Free K4T51163QN-BCE7 Samsung
DDR2-800 128Mx8 Pb-Free K4T1G084QJ-BCE7 Samsung
DDR2-800 128Mx8 (1Gb) MT47H128M8SH-25E:M Micron
DDR2-800 64Mx8 Pb-Free Halogen-Free K4T51083QN-BCE7 Samsung
DDR2-800 64Mx16 Pb-Free K4T1G164QJ-BCE7 Samsung
DDR2-800 8x16 (1Gb) W971GG8NB-25 Winbond
DDR2-800 64Mx8 (512Mb) MT47H64M8SH-25E:H Micron
DDR2-800 64Mx16 BGA NT5TU64M16HG-ACI Nanya
LPDDR5
LPDDR5-8533 1536Mx64 (96Gb) MT62F1536M64D8CL-023 WT:B Micron
LPDDR4
LPDDR4X-4266 x32 (8Gb) K4U8E3S4AD-MGCL Samsung
LPDDR4-3733 512Mx32 (16Gb) K4F6E3S4HM-MGCJ Samsung
LPDDR4-4266 512Mx32 (16Gb) K4F6E3S4HM-TFCL Samsung
LPDDR4-4266 256Mx32 (8Gb) Ind MT53E256M32D2DS-046 IT:B Micron
LPDDR4X-4266 x32 (16Gb) K4U6E3S4AB-MGCL Samsung
LPDDR4-4266 1Gx32 (32Gb) MT53E1G32D2FW-046 WT:B Micron
LPDDR4-4266 256Mx32 (8Gb) MT53E256M32D1KS-046 IT:L Micron
LPDDR4-3733 512Mx32 (16Gb) K4F6E3S4HM-MGCJT Samsung
Mobile/Low-Power DDR (LPDDR)
LPDDR-400 32Mx16 TSOP Pb-Free MT46V32M16P-5B IT:J Micron
LPDDR-400 32Mx16 FBGA (Pb-Free) Ind MT46V32M16CY-5B IT:J Micron
High Bandwidth Memory (HBM)
HBM2E 3.6Gb/s 16GB KHAA84901B-JC17 Samsung
HBM2 2Gb/s 8Gb KHA884901X-MC12T Samsung
HBM2 2Gb/s 8Gb KHA884901X-MC12TIF Samsung
GDDR6 SDRAM/SGRAM
GDDR6 16Gb/s 256Mx32 (8Gb) K4Z80325BC-HC16 Samsung
GDDR6 20Gb/s 512Mx32 (16Gb) K4ZAF325BC-SC20 Samsung
GDDR5 SDRAM/SGRAM
GDDR5 8Gb/s 256Mx32 (8Gb) K4G80325FC-HC25 Samsung
Mobile SDRAM (LPSDR)
SD 16Mx16 166MHz FBGA MT48LC16M16A2B4-6A:G Micron
SDRAM PC166
SD 16Mx16 PC166 Pb-Free AS4C16M16SA-6TIN Alliance