DRAM
|
DDR5
|
DDR5-4800 1Gx16 (16Gb) |
K4RAH165VB-BCQK |
Samsung |
|
DDR4
|
DDR4-3200 512Mx16 (8Gb) |
H5AN8G6NDJR-XNC |
SK hynix |
|
DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BCWE |
Samsung |
|
DDR4-3200 512Mx16 (8Gb) |
MT40A512M16TB-062E:R |
Micron |
|
DDR4-3200 2Gx8 (16Gb) |
MT40A2G8SA-062E:F |
Micron |
|
DDR4-3200 1Gx8 (8Gb) Ind |
MT40A1G8SA-062E IT:E |
Micron |
|
DDR4-3200 1Gx8 (8Gb) |
K4A8G085WC-BCWE |
Samsung |
|
DDR4-3200 1Gx8 (8Gb) |
K4A8G085WC-BCWE0MM |
Samsung |
|
DDR4-3200 1Gx16 (16Gb) |
K4AAG165WA-BITD |
Samsung |
|
DDR4-3200 1Gx16 (16Gb) |
K4AAG165WB-BCWE |
Samsung |
|
DDR4-3200 1Gx16 (16Gb) |
MT40A1G16TB-062E:F |
Micron |
|
DDR4-2666 512Mx8 (4Gb) |
K4A4G085WF-BCTD |
Samsung |
|
DDR4-2666 512Mx8 (4Gb) |
K4A4G085WF-BITD |
Samsung |
|
DDR4-2666 512Mx8 (4Gb) |
K4A4G085WF-BCTDTCV |
Samsung |
|
DDR4-2666 512Mx16 (8Gb) |
H5AN8G6NCJR-VKC |
SK hynix |
|
DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD |
Samsung |
|
DDR4-2666 256Mx16 (4Gb) |
K4A4G165WF-BCTD |
Samsung |
|
DDR4-2666 1Gx8 (8Gb) |
K4A8G085WC-BCTD |
Samsung |
|
DDR4-2666 1Gx16 (16Gb) |
K4AAG165WA-BCTD |
Samsung |
|
DDR4-2400 256Mx16 (4Gb) |
K4A4G165WE-BCRC |
Samsung |
|
DDR4-3200 2Gx8 (16Gb) Ind |
MT40A2G8SA-062E IT:F |
Micron |
|
DDR4-3200 2Gx16 (32Gb) |
K4ABG165WB-MCWE |
Samsung |
|
DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD000 |
Samsung |
|
DDR4-3200 512Mx16 (8Gb) Ind |
MT40A512M16TB-062E IT:R |
Micron |
|
DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BCWE000 |
Samsung |
|
DDR3
|
DDR3-1600 128Mx16 (2Gb) |
MT41K128M16JT-125:K |
Micron |
|
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-125 IT:K |
Micron |
|
DDR3-2133 512Mx8 (4Gb) |
K4B4G0846E-BCNB |
Samsung |
|
DDR3-2133 256Mx8 (2Gb) |
K4B2G0846F-BCNB |
Samsung |
|
DDR3-2133 256Mx16 (4Gb) |
H5TQ4G63EFR-TEC |
SK hynix |
|
DDR3-2133 256Mx16 (4Gb) |
K4B4G1646E-BCNB |
Samsung |
|
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
MT41K512M8DA-107 IT:P |
Micron |
|
DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
|
DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 AAT:P |
Micron |
|
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
MT41K256M16TW-107 IT:P |
Micron |
|
DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
|
DDR3-1866 256Mx16 (4Gb) |
H5TQ4G63EFR-RDC |
SK hynix |
|
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
K4B2G1646F-BMMA |
Samsung |
|
DDR3-1866 128Mx16 (2Gb) AutoG2 1.35V |
NT5CC128M16JR-EKH |
Nanya |
|
DDR3-1866 128Mx16 (2Gb) 1.35V |
K4B2G1646F-BYMA |
Samsung |
|
DDR3-1600 64Mx16 (1Gb) 1.35V |
NT5CC64M16GP-DI |
Nanya |
|
DDR3-1600 64Mx16 (1Gb) 1.35V |
W631GU6NB-12 |
Winbond |
|
DDR2
|
DDR2-800 32Mx16 Pb-Free Halogen-Free |
K4T51163QN-BCE7 |
Samsung |
|
DDR2-800 32Mx16 (512Mb) |
MT47H32M16NF-25E:H |
Micron |
|
DDR2-800 128Mx8 Pb-Free |
K4T1G084QJ-BCE7 |
Samsung |
|
DDR2-800 64Mx16 Pb-Free |
K4T1G164QJ-BCE7 |
Samsung |
|
DDR2-800 64Mx16 FBGA |
MT47H64M16NF-25E:M |
Micron |
|
DDR2-800 64Mx16 (1Gb) Ind |
MT47H64M16NF-25E IT:M |
Micron |
|
DDR2-800 64Mx16 (1Gb) |
W971GG6NB-25 |
Winbond |
|
LPDDR5
|
LPDDR5-6400 1Gx64 (64Gb) |
MT62F1G64D8EK-031 AAT:B |
Micron |
|
LPDDR5-7500 4Gx32 (128Gb) |
MT62F4G32D8DV-026 WT:B |
Micron |
|
LPDDR5-8533 1536Mx64 (96Gb) |
MT62F1536M64D8CL-023 WT:B |
Micron |
|
LPDDR5-8533 2Gx64 (128Gb) WFBGA |
MT62F2G64D8ZA-023 WT:C |
Micron |
|
LPDDR5-8533 2Gx64 (128Gb) FBGA |
MT62F2G64D8CL-023 WT:B |
Micron |
|
LPDDR5-7500 1Gx32 TFBGA (32Gb) |
MT62F1G32D2DS-026 WT:B |
Micron |
|
LPDDR5-6400 2Gx32 (64Gb) |
MT62F2G32D4DS-026 WT:B |
Micron |
|
LPDDR4
|
LPDDR4-4266 (32Gb) |
H9HCNNNCPUMLXR-NEE |
SK hynix |
|
LPDDR4-4266 512Mx32 (16Gb) |
MT53D512M32D2DS-046 AAT:D |
Micron |
|
LPDDR4-4266 512Mx32 (16Gb) |
MT53D512M32D2DS-046 WT:D |
Micron |
|
LPDDR4-3733 512Mx32 (16Gb) |
MT53D512M32D2DS-053 WT:D |
Micron |
|
LPDDR4-3733 256Mx32 (8Gb) |
K4F8E304HB-MGCJ |
Samsung |
|
LPDDR4-3733 256Mx32 (8Gb) |
MT53E256M32D2DS-053 WT:B |
Micron |
|
LPDDR4-3200 128Mx32 (4Gb) AAT DDP |
H9HCNNN4KUMLHR-NLO |
SK hynix |
|
LPDDR4-4266 512Mx32 (16Gb) Ind |
MT53E512M32D1ZW-046 IT:B |
Micron |
|
LPDDR4X-4266 x32 (64Gb) |
K4UCE3Q4AB-MGCL |
Samsung |
|
LPDDR4-3733 128Mx32 (4Gb) |
K4F4E3S4HF-GHCJ |
Samsung |
|
LPDDR4X (32Gb) |
K4UBE3S4AA-MGCL |
Samsung |
|
Mobile/Low-Power DDR (LPDDR)
|
LPDDR-400 32Mx16 TSOP Pb-Free |
MT46V32M16P-5B:J |
Micron |
|
LPDDR-200 32Mx16 (512Mb) Ind |
MT46H32M16LFBF-5 IT:C |
Micron |
|
LPDDR-400 64Mx32 |
MT46H64M32LFBQ-48 IT:C |
Micron |
|
LPDDR-266 64Mx16 |
K4X1G163PE-FGC6 |
Samsung |
|
LPDDR-333 16Mx32 VFBGA Low Power |
MT46H16M32LFB5-5 IT:C |
Micron |
|
High Bandwidth Memory (HBM)
|
HBM2E 3.6Gb/s 16GB |
KHAA84901B-JC17 |
Samsung |
|
GDDR6 SDRAM/SGRAM
|
GDDR6 16Gb/s 512Mx32 (16Gb) |
K4ZAF325BM-HC16 |
Samsung |
|
GDDR6 14Gb/s 256Mx32 (8Gb) |
K4Z80325BC-HC14 |
Samsung |
|
GDDR6 256Mx32 7GHz (8Gb) |
H56C8H24AIR-S2C |
SK hynix |
|
GDDR6 14Gb/s 512Mx32 (16Gb) |
K4ZAF325BM-SC14 |
Samsung |
|
GDDR6 16Gb/s 512Mx32 (16Gb) |
K4ZAF325BC-SC16 |
Samsung |
|